Standard-threshold 40V MOSFETs in enhanced STripFET F8 technology released

采用增強(qiáng)型STripFET F8技術(shù)的標(biāo)準(zhǔn)閾值40V MOSFET發(fā)布

ST has introduced 40V STripFET F8 MOSFETs with standard threshold voltage (VGS(th)), combining the advantages of the enhanced trench gate technology with superior noise immunity for applications with non-logic-level control.

意法半導(dǎo)體推出了具有標(biāo)準(zhǔn)閾值電壓 (VGS(th)) 的40V STripFET F8 MOSFET，將增強(qiáng)溝槽柵極技術(shù)的優(yōu)點(diǎn)與非邏輯電平控制應(yīng)用的卓越抗噪性相結(jié)合。

The industrial-grade STL300N4F8 and automotive-grade STL305N4F8AG MOSFETs have a drain current rating above 300A and maximum RDS(on) of 1m?, permitting outstanding efficiency in high-power applications. Enhancing dynamic performance, the total gate charge of 65nC (typical) with low device capacitances (Ciss, Crss) ensure minimal losses at high switching frequency. The MOSFET body diode assists efficiency and reliability with low forward voltage and fast reverse recovery.

工業(yè)級STL300N4F8和車規(guī)級STL305N4F8AG MOSFET的漏極電流額定值高于300A，最大RDS(on)為1m?，在高功率應(yīng)用中表現(xiàn)出出色的效率。為提高動態(tài)性能，65nC（典型值）的總柵極電荷和低器件電容（Ciss、Crss）確保了在高開關(guān)頻率下的最小損耗。MOSFET體二極管通過低正向電壓和快速反向恢復(fù)來提高效率和可靠性。

With the new device series, designers can take advantage of ST’s latest STripFET F8 technology in power supplies, converters, and motor drives of equipment like cordless appliances and industrial tools. The MOSFETs’ efficiency extends runtime per battery charge and reduces heat dissipation allowing operation at sustained high output with simplified thermal management to save space and lower bill-of-materials costs. The automotive-qualified devices target motor drives and DC/DC converters throughout the vehicle, including body electronics, chassis, and powertrain systems. Applications include window lifters, seat positioners, sunroof openers, fans and blowers, electric power steering, active suspension, and control systems for emissions reduction.

通過全新器件系列，設(shè)計(jì)者可在無繩電器和工業(yè)工具等設(shè)備的電源、轉(zhuǎn)換器和電機(jī)驅(qū)動器中利用意法半導(dǎo)體全新的STripFET F8技術(shù)。MOSFET的效率不僅延長了每次電池充電的運(yùn)行時間，減少了散熱，還通過簡化熱管理，實(shí)現(xiàn)了持續(xù)高輸出下的運(yùn)行，在節(jié)省空間的同時，還降低了材料成本。車規(guī)級器件面向整臺車輛的電機(jī)驅(qū)動器和DC/DC轉(zhuǎn)換器，包括車身電子設(shè)備、底盤和動力總成系統(tǒng)。相關(guān)的應(yīng)用包括車窗升降器、座椅定位器、天窗開啟器、風(fēng)扇和鼓風(fēng)機(jī)、電動助力轉(zhuǎn)向、主動懸架和減排控制系統(tǒng)。

ST’s STripFET F8 technology ensures ruggedness within a large safe operating area (SOA), enabling the devices to handle high power levels that impose large drain-source voltage (VDS) drops. In addition, the high maximum operating junction temperature of 175°C lets the MOSFETs withstand harsh usage in extreme environments.

意法半導(dǎo)體的STripFET F8技術(shù)確保了大安全工作區(qū)域 (SOA) 的穩(wěn)健性，使器件能夠處理施加大漏-源電壓（VDS）降的高功率電平。此外，175°C的最高工作結(jié)溫使MOSFET能夠承受極端惡劣的使用環(huán)境。

In addition, the technology enables a small die size allowing low RDS(on) at a competitive price in a package that has a compact footprint. Both devices are available in a space efficient PowerFLAT 5x6 package, also including the wettable flanks option requested by the automotive industry.

不僅如此，該技術(shù)還實(shí)現(xiàn)了小芯片尺寸，能夠在緊湊的封裝中以具有競爭力的價格實(shí)現(xiàn)低RDS(on)。兩款器件均采用節(jié)省空間的PowerFLAT 5x6封裝，同時還包含了汽車行業(yè)要求的可濕性側(cè)面選項(xiàng)。

The STL300N4F8 is available now priced from $0.8370 for orders of 1000 units. The STL305N4F8AG is priced from $0.9730 per 1000 units.

STL300N4F8可訂購，千片起訂單價0.8370美元。STL305N4F8AG（車規(guī)級）千片起訂單價0.9730美元。