該P(yáng)DK是業(yè)界第一個(gè)解決了14nm技術(shù)節(jié)點(diǎn)，目的是為引進(jìn)一些新型關(guān)鍵技術(shù)，如FinFET技術(shù)和EUV光刻技術(shù)等。PDK接下來將向IMEC的合作伙伴提供持續(xù)更新。IMEC和其合作伙伴正在開發(fā)14nm測(cè)試芯片，將在2012年下半年發(fā)布使用該P(yáng)DK。

With this PDK release, imec leads the way to an industry-standard 14nm PDK. In addition, the PDK anticipates the introduction of a number of new technologies at the 14nm node. The main example is the use of FinFET transistors, which have a larger drive per unit footprint and higher performance at low supply voltages compared to the traditional planar technologies. Evolutions of this PDK will gradually also introduce the use of high-mobility channel materials. The PDK includes elements of both immersion- and EUV lithography, opening the way for a gradual transition from 193nm immersion to EUV lithography.

This first 14nm PDK contains all elements for design assessment of the 14nm node through device compact models, parasitic extraction, design rules, parameterized cells (pcells), and basic logic cells. Starting from the PDK, imec and its partners are now designing a first test chip. This chip, planned for the 2nd half of 2012, will allow testing the device-, interconnect-, process- and litho assumptions, as well as performance and power of circuits implemented at the tight area budgets of the 14nm node.

The 14nm PDK was developed in the frame of imec’s INSITE program, and together with all the partners involved in this collaborative affiliation program. Through the INSITE program, imec offers its partners a very early insight in technologies. This way, companies can anticipate upcoming developments and start designing the more advanced systems and applications today, and get them on the market faster.