元器件交易網(wǎng)訊 11月20日消息，根據(jù)韓國內(nèi)存芯片制造商SK海力士消息，公司已經(jīng)開始大規(guī)模批量生產(chǎn)64GB 16nm MLC NAND閃存芯片。

公司表示，SK海力士的16nm NAND閃存已于6月進(jìn)入第一版本的批量生產(chǎn)，最近已開始第二版本的大規(guī)模生產(chǎn)。由于芯片尺寸更小，這樣更具成本競爭力。

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NAND路線圖匯總

公司指出，SK海力士還根據(jù)16nm 64Gb MLC的規(guī)格和耐力開發(fā)出128GB（16GB）MLC芯片，定于2014年初批量生產(chǎn)。

公司表示，一般來說，越薄的工藝技術(shù)能更有效地縮小單元之間更頻繁的干擾，但SK海力士應(yīng)用的最新氣隙技術(shù)（Air-Gap），克服了單元之間的干擾。氣隙技術(shù)使用真空孔在電路之間構(gòu)建絕緣屏蔽，而不是用化學(xué)物質(zhì)隔離。（元器件交易網(wǎng)郭路平 譯）

外文：

SK Hynix starts full-scale mass production of 16nm NAND flash

SK Hynix has started full-scale mass production of 16nm 64-gigabit (Gb) MLC NAND flash chips, according to the South Korea-based memory chipmaker.

SK Hynix entered mass production of its first-version 16nm NAND flash in June, and has recently started to mass produce the second version which is more cost competitive due to its smaller chip size, the company said.

SK Hynix has also developed 128Gb (16-gigabytes, 16GB) MLC chips based on the specification and endurance of 16nm 64Gb MLC, with mass production scheduled for early 2014, the company noted.

Generally, the thinner process technology shrinks the more frequent interferences among cells occur, but SK Hynix applied up-to-date Air-Gap technology to overcome the interferences among the cells, the company indicated. The Air-Gap technology builds insulation shield with vacuum holes between circuits not with insulating substances.

"After the company developed and started to mass produce the industry's thinnest 16nm product then now prepared high density NAND flash product portfolio thanks to the development of 16nm 128Gb MLC," said Jin Woong Kim, senior VP and head of SK Hynix' flash tech development.